Semiconductor Lasers Based on Quantum Well Structures

  • Dusan Pudis
  • J. Kovac, Jr.
  • J. Kovac
  • J. Jakabovic
Keywords: no keywords

Abstract

We present electrical and optical properties of the quantum well laser structures based on InAs / AlxGa1-x As material systems. The experimental results obtained from room- and low temperature electroluminescence measurements of InAs/Al0.40Ga0.60 As revealed the excellent emission spectra in the visible range 620-660 nm. The experimentally obtained transitions energies were compared with simple Kronig-Penney simulations. Going to low temperatures the stimulated emission from the cleaved edge was observed, which could be real perspective for laser applications.

Author Biographies

Dusan Pudis

University of Zilina, Department of Physics, Slovakia

J. Kovac, Jr.

International Laser Center, Bratislava, Slovakia

J. Kovac

International Laser Center, Bratislava, Slovakia

J. Jakabovic

Slovak Technical University, Department of Microelectronics, Bratislava, Slovakia

Published
2003-06-30
How to Cite
Pudis, D., Kovac, Jr., J., Kovac, J., & Jakabovic, J. (2003). Semiconductor Lasers Based on Quantum Well Structures. Communications - Scientific Letters of the University of Zilina, 5(2), 29-32. Retrieved from http://journals.uniza.sk/index.php/communications/article/view/1348
Issue
Vol 5 No 2 (2003)
Section
Articles