DLTS Study of InGaAsN/GaAs p-i-n Diode

  • Jakub Rybar
  • Lubica Stuchlikova
  • Ladislav Harmatha
  • Juraj Jakus
  • Jaroslav Kovac
  • Beata Sciana
  • Damian Radziewicz
  • Damian Pucicki
  • Wojciech Dawidowski
  • Marek Tlaczala
Keywords: DLTS, deep energy level, InGaAsN, p-i-n, multijunction solar cells

Abstract

The paper presents an in-depth DLTS characterization of the p-i-n structure based on the InGaAsN/GaAs triple quantum well. Three DLTS evaluation methods were used for evaluation of the measured DLTS spectra. The results of all evaluation methods are compared and discussed. One of the evaluation methods that were used is a novel numerical algorithm that was recently developed. Several material and growth defects were identified. Emission from the quantum well was also observed and identified. The parameters of the energy levels were calculated and compared. The studied InGaAsN/GaAs structure is promising candidate for the solar cell applications and the further refinement of the growth process and technology is encouraged.

Author Biographies

Jakub Rybar

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

Lubica Stuchlikova

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

Ladislav Harmatha

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

Juraj Jakus

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

Jaroslav Kovac

Institute of Electronics and Photonics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava, Slovakia

Beata Sciana

Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wroclaw, Poland

Damian Radziewicz

Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wroclaw, Poland

Damian Pucicki

Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wroclaw, Poland

Wojciech Dawidowski

Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wroclaw, Poland

Marek Tlaczala

Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wroclaw, Poland

Published
2014-02-28
How to Cite
Rybar, J., Stuchlikova, L., Harmatha, L., Jakus, J., Kovac, J., Sciana, B., Radziewicz, D., Pucicki, D., Dawidowski, W., & Tlaczala, M. (2014). DLTS Study of InGaAsN/GaAs p-i-n Diode. Communications - Scientific Letters of the University of Zilina, 16(1), 10-14. Retrieved from http://journals.uniza.sk/index.php/communications/article/view/477
Issue
Vol 16 No 1 (2014)
Section
Articles