NSOM Lithography for Organized Growth of Gap Nanowires

  • Ivana Lettrichova
  • Dusan Pudis
  • Agata Laurencikova
  • Stanislav Hasenohrl
  • Jozef Novak
  • Jaroslava Skriniarova
Keywords: NSOM lithography, predefined structure, organized nanowire growth

Abstract

In this contribution, near field scanning optical microscope (NSOM) lithography is presented as a tool for organized growth of nanowires. Non contact mode of NSOM lithography was used to pattern planar structures in photoresist deposited on GaP substrate. In combination with lift-off technique, metal-catalyst particles on GaP substrate for subsequent growth of GaP nanowires were prepared. Different periodic and predefined arrangements of GaP nanowires were achieved.

Author Biographies

Ivana Lettrichova

Div. of Optics and Photonics, Dept. of Physics, University of Zilina, Slovakia

Dusan Pudis

Div. of Optics and Photonics, Dept. of Physics, University of Zilina, Slovakia

Agata Laurencikova

Inst. of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

Stanislav Hasenohrl

Inst. of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

Jozef Novak

Inst. of Electrical Engineering, Slovak Academy of Sciences, Bratislava, Slovakia

Jaroslava Skriniarova

Inst. of Electronics and Photonics, Slovak University of Technology, Bratislava, Slovakia

Published
2014-02-28
How to Cite
Lettrichova, I., Pudis, D., Laurencikova, A., Hasenohrl, S., Novak, J., & Skriniarova, J. (2014). NSOM Lithography for Organized Growth of Gap Nanowires. Communications - Scientific Letters of the University of Zilina, 16(1), 21-25. Retrieved from http://journals.uniza.sk/index.php/communications/article/view/479
Issue
Vol 16 No 1 (2014)
Section
Articles